Please use this identifier to cite or link to this item: http://cybertesis.uni.edu.pe/handle/uni/17423
Title: Semiconductor lasers
Authors: González, Carmen
Keywords: Semiconductor lasers;Física
Issue Date: Dec-2012
Publisher: Universidad Nacional de Ingeniería
Citation: González, C. (2012). Semiconductor lasers. REVCIUNI, 15(1).
Series/Report no.: Volumen;15
Número;1
Abstract: In this short-course, we described simply the physics of semiconductor lasers. After a few reminders of basic solid state physics on electronic states in semiconductors, how a semiconductor can emit light has been considered. The p-n junction is the basic mechanism for obtaining the population inversion required for stimulated emission gain. We presented the principies and fundamental equations governing the optical gain in these structures. The threshold conditions is then determined and the various improvements over the basic p-n junction (double heterostructure laser, quantum well laser) are set in historical perspective. Then, the variety of semiconductor lasers is illustrated by sorne examples: distributed feedback (DFB) lasers, distributed Bragg reflector (DBR) lasers, mode-locked lasers (MLL). Finally, an attempt to put into perspective sorne advanced semiconductor lasers, in particular the quantum dot lasers, has been made.
URI: http://cybertesis.uni.edu.pe/handle/uni/17423
ISSN: 1813 – 3894
Rights: info:eu-repo/semantics/embargoedAccess
Appears in Collections:Vol. 15 Núm. 1 (2012)

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